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| IPF06N03LA OptiMOS(R)2 Power-Transistor Features * Ideal for high-frequency dc/dc converters * N-channel * Logic level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * Superior thermal resistance * 175 C operating temperature * dv /dt rated Product Summary V DS R DS(on),max ID 25 5.4 50 V m A P-TO252-3-23 Type IPF06N03LA Package P-TO252-3-23 Ordering Code Q67042-S4194 Marking 06N03LA Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C1) T C=100 C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 C T C=25 C2) I D=45 A, R GS=25 I D=50 A, V DS=20 V, di /dt =200 A/s, T j,max=175 C Value 50 50 350 300 6 20 94 -55 ... 175 55/175/56 mJ kV/s V W C Unit A Rev. 1.2 page 1 2003-12-19 IPF06N03LA Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area4) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=50 A V DS=25 V, V GS=0 V, T j=25 C V DS=25 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=30 A V GS=10 V, I D=30 A Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=30 A 25 1.2 1.6 0.1 2 1 A V 1.6 75 50 K/W Values typ. max. Unit 28 10 10 7.0 4.5 1 56 100 100 8.7 5.4 S nA m 1) Current is limited by bondwire; with an R thJC=1.6 K/W the chip is able to carry 103 A. See figure 3 T j,max=150 C and duty cycle D <0.25 for V GS<-5 V 2) 3) 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.2 page 2 2003-12-19 IPF06N03LA Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics5) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total, sync. FET Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage IS I S,pulse V SD T C=25 C V GS=0 V, I F=50 A, T j=25 C V R=15 V, I F=I S, di F/dt =400 A/s 0.9 50 350 1.2 V A Q gs Q g(th) Q gd Q sw Qg V plateau Q g(sync) Q oss V DS=0.1 V, V GS=0 to 5 V V DD=15 V, V GS=0 V V DD=15 V, I D=25 A, V GS=0 to 5 V 7 3.7 5.5 9 19 3.2 16 21 10 5.0 8 13 25 22 28 V nC nC C iss C oss Crss t d(on) tr t d(off) tf V DD=15 V, V GS=10 V, I D=25 A, R G=2.7 V GS=0 V, V DS=15 V, f =1 MHz 2338 993 143 10 11 25 4 3110 1320 215 15 17 38 6 ns pF Values typ. max. Unit Reverse recovery charge Q rr - - 10 nC 5) See figure 16 for gate charge parameter definition Rev. 1.2 page 3 2003-12-19 IPF06N03LA 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V 100 90 80 70 60 60 50 40 P tot [W] 50 40 30 20 10 0 0 50 100 150 200 I D [A] 30 20 10 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operation area I D=f(V DS); T C=25 C; D =0 parameter: t p 1000 1 s 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 10 limited by on-state resistance 10 s 1 0.5 100 0.2 Z thJC [K/W] 100 s 0.1 I D [A] DC 0.1 0.05 0.02 0.01 single pulse 1 ms 10 ms 10 0.01 1 0.1 1 10 100 0.001 0 -6 10 0 10-5 0 10-4 -3 100 0 10 -2 10-10 10 0 1 V DS [V] t p [s] Rev. 1.2 page 4 2003-12-19 IPF06N03LA 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 100 10 V 4.5 V 4.1 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 20 3V 3.2 V 3.5 V 3.8 V 4.1 V 90 80 70 60 18 16 14 R DS(on) [m] 3.8 V 12 10 8 6 4.5 V I D [A] 50 40 30 3.2 V 3.5 V 20 3V 4 2.8 V 10 V 10 0 0 1 2 2 0 3 0 20 40 60 80 100 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 100 90 80 70 60 50 40 30 20 175 C 8 Typ. forward transconductance g fs=f(I D); T j=25 C 100 90 80 70 60 g fs [S] 25 C I D [A] 50 40 30 20 10 0 10 0 0 1 2 3 4 5 0 10 20 30 40 50 60 V GS [V] I D [A] Rev. 1.2 page 5 2003-12-19 IPF06N03LA 9 Drain-source on-state resistance R DS(on)=f(T j); I D=30 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 10 9 8 7 2 500 A 98 % 2.5 R DS(on) [m] V GS(th) [V] 6 5 4 3 2 1 0 -60 -20 20 1.5 50 A typ 1 0.5 0 60 100 140 180 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. Capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 10000 1000 Ciss 100 175 C 25 C 25 C, 98 % 175 C, 98 % C [pF] 1000 I F [A] 10 1 20 25 30 0 Coss Crss 100 0 5 10 15 0.5 1 1.5 2 V DS [V] V SD [V] Rev. 1.2 page 6 2003-12-19 IPF06N03LA 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 100 14 Typ. gate charge V GS=f(Q gate); I D=25 A pulsed parameter: V DD 12 10 150 C 100 C 25 C 15 V 5V 20 V 8 10 V GS [V] 1 10 100 1000 IAV [A] 6 4 2 1 0 0 10 20 30 40 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 29 V GS 28 27 26 Qg V BR(DSS) [V] 25 24 23 22 21 20 -60 -20 20 60 100 140 180 V g s(th) Q g (th) Q gs Q sw Q gd Q gate T j [C] Rev. 1.2 page 7 2003-12-19 IPF06N03LA Package Outline P-TO252-3-23 Dimensions in inch [mm] Footprint Dimensions in mm Rev. 1.2 page 8 2003-12-19 IPF06N03LA Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Strae 53 D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts started herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.2 page 9 2003-12-19 |
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